A5G35H120NT2

Teknik Özellikler

Tedarikçi Cihaz Paketi

10-DFN (7x10)

Ürün Durumu

Active

Tip

RF Power MOSFET

Paket

Tape & Reel (TR)

Montaj Stili

SMD/SMT

Kılıf / Paket

10-PowerLDFN

Shipping Restrictions

This product may require additional documentation to export from the United States.

Vds Drainsource Breakdown Voltage

125 V

Technology

GaN Si

Maks. Çalışma Sıcaklığı

+ 150 C

Frekans

3.3GHz ~ 3.7GHz

Fabrika Paket Adedi

2000

Vgs Th Gatesource Threshold Voltage

- 4.6 V

Minimum Operating Temperature

- 55 C

Id Continuous Drain Current

10 mA

Part Aliases

935432729518

Number Of Channels

1 Channel

Nominal Gerilim

125 V

Power Output

18W

Operating Frequency

3300 MHz to 3700 MHz

Vgs Gatesource Voltage

- 8 V

Output Power

18 W

Ambalaj

Cut Tape

RoHS

Details

Voltage Test

48 V

Transistor Polarity

N-Channel

Current Test

70 mA

Gain

14.1dB

Ürün Tipi

RF MOSFET Transistors