Adet bazlı fiyat
- 1+ adet$26.38
- 10+ adet$24.89
- 100+ adet$23.48
- 500+ adet$22.15
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Vgs Gatesource Voltage
- - 8 V
- Transistor Type
- GaN
- RoHS
- Details
- Part Aliases
- 935402445528
- Transistor Polarity
- Dual N-Channel
- Voltage Test
- 48 V
- Kılıf / Paket
- 6-LDFN Exposed Pad
- Ambalaj
- Cut Tape
- Vgs Th Gatesource Threshold Voltage
- - 3.5 V
- Frekans
- 100MHz ~ 2.69GHz
- Nominal Gerilim
- 125 V
- Vds Drainsource Breakdown Voltage
- 125 V
- Tip
- RF Power MOSFET
- Technology
- GaN Si
- Fabrika Paket Adedi
- 2500
- Gain
- 13.9dB
- Minimum Operating Temperature
- - 55 C
- Number Of Channels
- 2 Channel
- Output Power
- 8 W
- Tedarikçi Cihaz Paketi
- 6-PDFN (7x6.5)
- Montaj Stili
- SMD/SMT
- Id Continuous Drain Current
- 3 mA
- Operating Frequency
- 100 MHz to 2690 MHz
- Ürün Durumu
- Active
- Maks. Çalışma Sıcaklığı
- + 150 C
- Power Output
- 8W
- Ürün Tipi
- RF MOSFET Transistors
- Current Test
- 40 mA
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