PMZ370UNE

Teknik Özellikler

Reference Standard

IEC-60134

Configuration

SINGLE WITH BUILT-IN DIODE

Ds Breakdown Voltagemin

30 V

Drain Currentmax Id

0.9 A

Ihs Manufacturer

NXP SEMICONDUCTORS

Date Of Intro

2017-02-17

Number Of Terminals

3

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Operating Mode

ENHANCEMENT MODE

Polaritychannel Type

N-CHANNEL

Package Body Material

PLASTIC/EPOXY

Rohs Code

Yes

Terminal Pozisyonu

BOTTOM

JESD-609 Kodu

e3

REACH Uyumluluk Kodu

unknown

Package Style

CHIP CARRIER

Moisture Sensitivity Levels

1

Transistor Application

SWITCHING

Case Connection

DRAIN

Jesd30 Code

R-PBCC-N3

Yüzey Montaj

YES

Package Shape

RECTANGULAR

Number Of Elements

1

Terminal Formu

NO LEAD

Transistor Element Material

SILICON

Package Description

,

Part Life Cycle Code

Transferred

Terminal Kaplaması

TIN

ECCN Kodu

EAR99

Tepe Reflow Süresi (maks. sn)

30

Drainsource On Resistancemax

0.49 Ω

Tepe Reflow Sıcaklığı (°C)

260