PHU2N50E

Teknik Özellikler

Terminal Kaplaması

Tin/Lead (Sn/Pb)

Drainsource On Resistancemax

5 Ω

Number Of Terminals

3

Package Shape

RECTANGULAR

Yüzey Montaj

NO

Terminal Pozisyonu

SINGLE

Jesd30 Code

R-PSIP-T3

Package Body Material

PLASTIC/EPOXY

Avalanche Energy Rating Eas

82 mJ

Operating Mode

ENHANCEMENT MODE

Terminal Formu

THROUGH-HOLE

Pulsed Drain Currentmax Idm

8 A

Transistor Application

SWITCHING

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Power Dissipationmax Abs

50 W

Configuration

SINGLE WITH BUILT-IN DIODE

Number Of Elements

1

Transistor Element Material

SILICON

Ihs Manufacturer

NXP SEMICONDUCTORS

JESD-609 Kodu

e0

Package Description

IN-LINE, R-PSIP-T3

Package Style

IN-LINE

Rohs Code

No

Polaritychannel Type

N-CHANNEL

Case Connection

DRAIN

ECCN Kodu

EAR99

Drain Currentmax Id

2 A

Ds Breakdown Voltagemin

500 V

Qualification Status

Not Qualified

Pin Sayısı

3

Part Package Code

TO-251

Part Life Cycle Code

Obsolete

Jedec95 Code

TO-251

Operating Temperaturemax

150 °C

REACH Uyumluluk Kodu

unknown