PHD5N20E

Teknik Özellikler

Configuration

SINGLE WITH BUILT-IN DIODE

Transistor Element Material

SILICON

Ihs Manufacturer

NXP SEMICONDUCTORS

Ds Breakdown Voltagemin

200 V

Jesd30 Code

R-PSSO-G2

Case Connection

DRAIN

Terminal Formu

GULL WING

Terminal Pozisyonu

SINGLE

Package Style

SMALL OUTLINE

Transistor Application

SWITCHING

Qualification Status

Not Qualified

Package Description

SMALL OUTLINE, R-PSSO-G2

Pulsed Drain Currentmax Idm

20 A

Number Of Elements

1

REACH Uyumluluk Kodu

unknown

ECCN Kodu

EAR99

Polaritychannel Type

N-CHANNEL

Avalanche Energy Rating Eas

40 mJ

Drain Currentmax Id

5 A

Number Of Terminals

2

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Package Shape

RECTANGULAR

Pin Sayısı

3

Yüzey Montaj

YES

Package Body Material

PLASTIC/EPOXY

Drainsource On Resistancemax

0.9 Ω

Operating Mode

ENHANCEMENT MODE

Part Life Cycle Code

Obsolete