PHD3N20L

Teknik Özellikler

Yüzey Montaj

YES

Package Body Material

PLASTIC/EPOXY

Drainsource On Resistancemax

1.5 Ω

JESD-609 Kodu

e0

Part Life Cycle Code

Obsolete

Operating Mode

ENHANCEMENT MODE

Additional Feature

LOGIC LEVEL COMPATIBLE

Drain Currentmax Id

3.5 A

Number Of Terminals

2

Package Shape

RECTANGULAR

Rohs Code

No

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Pin Sayısı

3

Polaritychannel Type

N-CHANNEL

Avalanche Energy Rating Eas

25 mJ

Operating Temperaturemax

175 °C

Number Of Elements

1

Pulsed Drain Currentmax Idm

14 A

REACH Uyumluluk Kodu

unknown

ECCN Kodu

EAR99

Terminal Formu

GULL WING

Package Style

SMALL OUTLINE

Terminal Pozisyonu

SINGLE

Terminal Kaplaması

Tin/Lead (Sn/Pb)

Qualification Status

Not Qualified

Transistor Application

SWITCHING

Package Description

SMALL OUTLINE, R-PSSO-G2

Jesd30 Code

R-PSSO-G2

Power Dissipationmax Abs

50 W

Case Connection

DRAIN

Ihs Manufacturer

NXP SEMICONDUCTORS

Ds Breakdown Voltagemin

200 V

Configuration

SINGLE WITH BUILT-IN DIODE

Transistor Element Material

SILICON