PHB95N03LTA

Teknik Özellikler

Operating Mode

ENHANCEMENT MODE

Part Life Cycle Code

Obsolete

Package Body Material

PLASTIC/EPOXY

Drainsource On Resistancemax

0.009 Ω

JESD-609 Kodu

e0

Yüzey Montaj

YES

Pin Sayısı

3

Number Of Terminals

2

Package Shape

RECTANGULAR

Rohs Code

No

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Drain Currentmax Id

75 A

Operating Temperaturemax

175 °C

Avalanche Energy Rating Eas

120 mJ

Polaritychannel Type

N-CHANNEL

ECCN Kodu

EAR99

REACH Uyumluluk Kodu

unknown

Pulsed Drain Currentmax Idm

240 A

Number Of Elements

1

Package Description

SMALL OUTLINE, R-PSSO-G2

Transistor Application

SWITCHING

Qualification Status

Not Qualified

Terminal Kaplaması

Tin/Lead (Sn/Pb)

Package Style

SMALL OUTLINE

Terminal Pozisyonu

SINGLE

Terminal Formu

GULL WING

Power Dissipationmax Abs

125 W

Case Connection

DRAIN

Jesd30 Code

R-PSSO-G2

Ds Breakdown Voltagemin

25 V

Ihs Manufacturer

NXP SEMICONDUCTORS

Transistor Element Material

SILICON

Configuration

SINGLE WITH BUILT-IN DIODE