PHB87N03LT

Teknik Özellikler

Operating Temperaturemax

175 °C

Polaritychannel Type

N-CHANNEL

Avalanche Energy Rating Eas

200 mJ

ECCN Kodu

EAR99

Pulsed Drain Currentmax Idm

240 A

Number Of Elements

1

REACH Uyumluluk Kodu

unknown

Operating Mode

ENHANCEMENT MODE

Additional Feature

LOGIC LEVEL COMPATIBLE

Part Life Cycle Code

Obsolete

Yüzey Montaj

YES

JESD-609 Kodu

e0

Drainsource On Resistancemax

0.0105 Ω

Package Body Material

PLASTIC/EPOXY

Pin Sayısı

3

Drain Currentmax Id

75 A

Number Of Terminals

2

Turnon Timemax Ton

195 ns

Package Shape

RECTANGULAR

Rohs Code

No

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Turnoff Timemax Toff

260 ns

Ihs Manufacturer

NXP SEMICONDUCTORS

Power Dissipation Ambientmax

142 W

Ds Breakdown Voltagemin

25 V

Configuration

SINGLE WITH BUILT-IN DIODE

Transistor Element Material

SILICON

HTS Kodu

8541.29.00.95

Transistor Application

SWITCHING

Qualification Status

Not Qualified

Package Description

SMALL OUTLINE, R-PSSO-G2

Terminal Formu

GULL WING

Terminal Kaplaması

Tin/Lead (Sn/Pb)

Package Style

SMALL OUTLINE

Terminal Pozisyonu

SINGLE

Case Connection

DRAIN

Power Dissipationmax Abs

142 W

Jesd30 Code

R-PSSO-G2