PHB66N03LT

Teknik Özellikler

Pin Sayısı

3

Drain Currentmax Id

66 A

Number Of Terminals

2

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Package Shape

RECTANGULAR

Operating Mode

ENHANCEMENT MODE

Part Life Cycle Code

Obsolete

Yüzey Montaj

YES

Package Body Material

PLASTIC/EPOXY

Drainsource On Resistancemax

0.016 Ω

ECCN Kodu

EAR99

Pulsed Drain Currentmax Idm

228 A

Number Of Elements

1

REACH Uyumluluk Kodu

unknown

Operating Temperaturemax

175 °C

Polaritychannel Type

N-CHANNEL

Case Connection

DRAIN

Jesd30 Code

R-PSSO-G2

Transistor Application

SWITCHING

Qualification Status

Not Qualified

Package Description

SMALL OUTLINE, R-PSSO-G2

Terminal Formu

GULL WING

Terminal Pozisyonu

SINGLE

Package Style

SMALL OUTLINE

Configuration

SINGLE WITH BUILT-IN DIODE

Transistor Element Material

SILICON

Ihs Manufacturer

NXP SEMICONDUCTORS

Ds Breakdown Voltagemin

25 V