PHB45N03T

Teknik Özellikler

ECCN Kodu

EAR99

REACH Uyumluluk Kodu

unknown

Number Of Elements

1

Pulsed Drain Currentmax Idm

180 A

Operating Temperaturemax

175 °C

Avalanche Energy Rating Eas

60 mJ

Polaritychannel Type

N-CHANNEL

Pin Sayısı

3

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Rohs Code

No

Number Of Terminals

2

Package Shape

RECTANGULAR

Drain Currentmax Id

45 A

Part Life Cycle Code

Obsolete

Additional Feature

ESD PROTECTED

Operating Mode

ENHANCEMENT MODE

Drainsource On Resistancemax

0.024 Ω

Package Body Material

PLASTIC/EPOXY

JESD-609 Kodu

e0

Yüzey Montaj

YES

Transistor Element Material

SILICON

Configuration

SINGLE WITH BUILT-IN DIODE

Ds Breakdown Voltagemin

30 V

Ihs Manufacturer

NXP SEMICONDUCTORS

Power Dissipationmax Abs

86 W

Case Connection

DRAIN

Jesd30 Code

R-PSSO-G2

Package Description

SMALL OUTLINE, R-PSSO-G2

Qualification Status

Not Qualified

Transistor Application

SWITCHING

Terminal Pozisyonu

SINGLE

Package Style

SMALL OUTLINE

Terminal Kaplaması

Tin/Lead (Sn/Pb)

Terminal Formu

GULL WING