PHB10N40

Teknik Özellikler

Part Life Cycle Code

Obsolete

Terminal Kaplaması

Tin/Lead (Sn/Pb)

Pulsed Drain Currentmax Idm

43 A

Terminal Formu

GULL WING

Number Of Terminals

2

Configuration

SINGLE WITH BUILT-IN DIODE

Case Connection

DRAIN

Package Style

SMALL OUTLINE

ECCN Kodu

EAR99

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Operating Mode

ENHANCEMENT MODE

Polaritychannel Type

N-CHANNEL

Pin Sayısı

3

Package Shape

RECTANGULAR

Avalanche Energy Rating Eas

520 mJ

Number Of Elements

1

Transistor Application

SWITCHING

Ihs Manufacturer

NXP SEMICONDUCTORS

Terminal Pozisyonu

SINGLE

Package Body Material

PLASTIC/EPOXY

REACH Uyumluluk Kodu

unknown

Yüzey Montaj

YES

Operating Temperaturemax

150 °C

Jesd30 Code

R-PSSO-G2

Rohs Code

No

JESD-609 Kodu

e0

Power Dissipationmax Abs

147 W

Ds Breakdown Voltagemin

400 V

Transistor Element Material

SILICON

Drainsource On Resistancemax

0.55 Ω

Drain Currentmax Id

10.7 A

Qualification Status

Not Qualified

Package Description

SMALL OUTLINE, R-PSSO-G2