IRFZ24NPBF

Teknik Özellikler

Vgsth Max Id

4V @ 250μA

Yükseklik

19.8mm

RoHS Durumu

ROHS3 Compliant

Power Dissipation

45W

Additional Feature

ESD PROTECTED

Voltage Rated Dc

55V

Package Style

FLANGE MOUNT

Gate To Source Voltage Vgs

20V

Parça Durumu

Active

Çalışma Sıcaklığı

-55°C~175°C TJ

Reach Svhc

No SVHC

Threshold Voltage

2V

Lead Pitch

2.54mm

Radyasyon Dayanımı

No

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Terminal Formu

THROUGH-HOLE

Yüzey Montaj

NO

Akım Değeri

17A

Part Life Cycle Code

Active

Transistor Element Material

SILICON

Jedec95 Code

TO-220AB

Vgs Max

±20V

Power Dissipation Max

45W Tc

Number Of Terminals

3

Uzunluk

10.5156mm

Operating Mode

ENHANCEMENT MODE

Yayın Yılı

1999

Pulsed Drain Currentmax Idm

68 A

Package Body Material

PLASTIC/EPOXY

Polaritychannel Type

N-CHANNEL

ECCN Kodu

EAR99

Rds On Max Id Vgs

70m Ω @ 10A, 10V

Contact Plating

Tin

Terminal

Through Hole

Ambalaj

Tube

Kurşunsuz

Lead Free

Element Configuration

Single

Rise Time

34ns

Ds Breakdown Voltagemin

55 V

Transistor Application

SWITCHING