BUK7Y7R8-80EX

Teknik Özellikler

Yüzey Montaj

YES

Turn On Delay Time

16 ns

Terminal Formu

GULL WING

Exterior Housing Material

1

Parça Durumu

Active

Vgsth Max Id

4V @ 1mA

Power Dissipation

238W

Terminal Sayısı

4

Manufacturer Package Code

SOT669

Terminal Pozisyonu

SINGLE

Gate Charge Qg Max Vgs

63.3nC @ 10V

REACH Uyumluluk Kodu

compliant

Ihs Manufacturer

NXP SEMICONDUCTORS

Fall Time Typ

24 ns

ECCN Kodu

EAR99

Operating Temperaturemax

175 °C

Drive Voltage Max Rds On Min Rds On

10V

Part Package Code

SOIC

Case Connection

DRAIN

Pin Sayısı

4

Power Dissipation Max

238W Tc

Max Dual Supply Voltage

80V

Additional Feature

AVALANCHE RATED

Operating Mode

ENHANCEMENT MODE

Vgs Max

±20V

Montaj Tipi

Surface Mount

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Power Dissipationmax Abs

238 W

Polaritychannel Type

N-CHANNEL

Continuous Drain Current Id

100A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain To Source Breakdown Voltage

80V

Input Capacitance Ciss Max Vds

5347pF @ 25V

Rds On Max Id Vgs

7.8m Ω @ 25A, 10V

Fet Type

N-Channel

Transistor Element Material

SILICON

Yayın Yılı

2013

Configuration

SINGLE

Number Of Elements

1

Fabrika Tedarik Süresi

12 Weeks