BST82

Teknik Özellikler

Configuration

Single

Ambalaj

Cut Tape

Akım

15 A

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Montaj

Surface Mount

Threshold Voltage

2 V

Maks. Çalışma Sıcaklığı

150 °C

Terminal Kaplaması

Matte Tin (Sn)

Casepackage

SOT-23

Operating Mode

ENHANCEMENT MODE

Input Capacitance

25 pF

Min. Çalışma Sıcaklığı

-65 °C

Moisture Sensitivity Levels

1

Drain To Source Voltage Vdss

100 V

Yükseklik

1 mm

RoHS

Compliant

Üretici Parça No

BST82

Genişlik

1.4 mm

Uzunluk

3 mm

Risk Rank

3.8

Power Dissipation

830 mW

Gerilim

60 V

Part Life Cycle Code

Transferred

Package Description

,

Rohs Code

Yes

Reach Svhc

No SVHC

Drain To Source Resistance

10 Ω

Continuous Drain Current Id

190 mA

JESD-609 Kodu

e3

Ihs Manufacturer

PHILIPS SEMICONDUCTORS

Max Power Dissipation

830 mW

Yüzey Montaj

YES

Gate To Source Voltage Vgs

20 V

Element Configuration

Single

Drain Currentmax Abs Id

0.175 A

Power Dissipationmax Abs

0.3 W

Operating Temperaturemax

150 °C

REACH Uyumluluk Kodu

unknown

Polaritychannel Type

N-CHANNEL

Pin Sayısı

3