BLF645,112

Teknik Özellikler

Radyasyon Dayanımı

No

Maks. Çalışma Sıcaklığı

200 °C

Package Width

10.91(Max)

Yüzey Montaj

YES

Frekans

1.3 GHz

Operating Mode

ENHANCEMENT MODE

Channel Type

N

Typical Reverse Transfer Capacitance Vds Pf

1.2@32V

Part Life Cycle Code

Contact Manufacturer

Continuous Drain Current Id

32 A

Rohs Code

Yes

Supplier Package

LDMOST

Kurşunsuz

Lead Free

Mode Of Operation

CW Class-AB|2-Tone Class-AB

Transistor Type

LDMOS (Dual), Common Source

Package Length

34.16(Max)

Maximum Operating Temperature C

200

Ambalaj

Bulk

Configuration

Dual Common Source

Yayın Yılı

2008

Output Power W

100(Typ)

RoHS

Compliant

Üretici Parça No

BLF645,112

Risk Rank

4.73

Gain

18 dB

Maximum Gate Source Voltage V

11

Number Of Elements Per Chip

2

Pcb Changed

5

Minimum Operating Temperature C

-65

Typical Drain Efficiency

56

Ds Breakdown Voltagemin

65 V

Test Voltage

32 V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Drain To Source Voltage Vdss

65 V

Package Height

5.77(Max)

REACH Uyumluluk Kodu

unknown

Gate To Source Voltage Vgs

11 V

Maximum Vswr

10

Number Of Elements

2

Maximum Continuous Drain Current A

32