BLD6G22L-50

Teknik Özellikler

Transistor Element Material

SILICON

Risk Rank

5.81

Typical Drain Efficiency

40

Ds Breakdown Voltagemin

65 V

Terminal Formu

FLAT

Mounting

Screw

Minimum Operating Temperature C

-65

Package Body Material

CERAMIC, METAL-SEALED COFIRED

Pcb Changed

5

Number Of Elements Per Chip

2

Maximum Gate Source Voltage V

13

Number Of Terminals

4

Reflow Temperaturemax S

NOT SPECIFIED

Package Style

FLANGE MOUNT

Üretici Parça No

BLD6G22L-50

RoHS

Compliant

Output Power W

8(Typ)

Maximum Continuous Drain Current A

10.2

Pin Sayısı

5

Number Of Elements

2

Maximum Vswr

10

Maximum Frequency Mhz

2170

Military

No

Eccn Us

EAR99

Transistor Application

AMPLIFIER

Polaritychannel Type

N-CHANNEL

Minimum Frequency Mhz

2110

Channel Mode

Enhancement

Pin Sayısı

5

Package Height

4.65(Max)

REACH Uyumluluk Kodu

unknown

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Terminal Pozisyonu

DUAL

Channel Type

N

Package Description

FLANGE MOUNT, R-CDFM-F4

Operating Mode

ENHANCEMENT MODE

Yüzey Montaj

YES

Package Shape

RECTANGULAR

Part Life Cycle Code

Obsolete

ECCN Kodu

EAR99