PDTB114EUF

Teknik Özellikler

Parça Durumu

Active

Vce Saturation Max Ib Ic

100mV @ 2.5mA, 50mA

Frequency Transition

140 MHz

Montaj Tipi

Surface Mount

Current Supply Max

2mA

Besleme Gerilimi

3V

Polaritychannel Type

PNP

Fabrika Tedarik Süresi

4 Weeks

Max Power Dissipation

300mW

Transistor Type

NPN - Pre-Biased

Pin Sayısı

3

Current Collector Cutoff Max

500nA

Collectoremitter Breakdown Voltage

50V

Transition Frequency

140MHz

Resistor Base R1

10 kOhms

Transistor Element Material

SILICON

Nem Hassasiyeti (MSL)

1 (Unlimited)

Maks. Oturma Yüksekliği

0.039 (1.00mm)

Voltage Collector Emitter Breakdown Max

50 V

RoHS Durumu

ROHS3 Compliant

Base Resonator

Crystal

Currentcollector Ic Max

500 mA

Max Collector Current

500mA

Transistor Application

SWITCHING

Paket

Tape & Reel (TR)

Çalışma Sıcaklığı

-40°C ~ 85°C

Yayın Yılı

2014

Number Of Elements

1

Tip

TCXO

Ambalaj

Tape & Reel (TR)

Terminal Sayısı

3

Boyut / Ölçü

0.098 L x 0.079 W (2.50mm x 2.00mm)

Power Max

300 mW

Pin Sayısı

3

Dc Current Gain Hfe Min Ic Vce

70 @ 50mA, 5V

Seri

520

Resistor Emitter Base R2

10 kOhms

Collector Emitter Voltage Vceo

100mV

Kılıf / Paket

4-SMD, No Lead

Additional Feature

BUILT IN BIAS RESISTANCE RATIO IS 1