BC857BQAZ

Teknik Özellikler

Configuration

SINGLE

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ürün Durumu

Active

Frequency Transition

100MHz

Max Power Dissipation

280mW

Collectoremitter Breakdown Voltage

45V

Terminal Pozisyonu

DUAL

Voltage Collector Emitter Breakdown Max

45 V

Terminal Formu

NO LEAD

Transistor Element Material

SILICON

Jesd30 Code

R-PDSO-N3

Fabrika Tedarik Süresi

4 Weeks

Vce Saturation Max Ib Ic

400mV @ 5mA, 100mA

Max Collector Current

100mA

Current Collector Cutoff Max

15nA (ICBO)

Transistor Application

SWITCHING

Reference Standard

AEC-Q101; IEC-60134

Power Max

280 mW

Max Breakdown Voltage

45V

Paket

Bulk

Polaritychannel Type

PNP

Transition Frequency

100MHz

RoHS Durumu

ROHS3 Compliant

Tedarikçi Cihaz Paketi

DFN1010D-3

Yayın Yılı

2014

Terminal Sayısı

3

Kılıf / Paket

3-XDFN Exposed Pad

Collector Emitter Voltage Vceo

400mV

Parça Durumu

Active

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Ambalaj

Tape & Reel (TR)

Case Connection

COLLECTOR

Number Of Elements

1

Pin Sayısı

3

Seri

Automotive, AEC-Q101

Transistor Type

PNP

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Dc Current Gain Hfe Min Ic Vce

220 @ 2mA, 5V

Montaj

Surface Mount

Montaj Tipi

Surface Mount