RB521S30,115

Teknik Özellikler

Reverse Voltage

30V

Forward Current

200mA

Reference Standard

AEC-Q101; IEC-60134

Pin Sayısı

2

Peak Nonrepetitive Surge Current

1A

Montaj Tipi

Surface Mount

RoHS Durumu

ROHS3 Compliant

Applications

EFFICIENCY

Peak Reverse Current

2.5μA

Min. Çalışma Sıcaklığı

-55°C

Nem Hassasiyeti (MSL)

1 (Unlimited)

Element Configuration

Single

Contact Plating

Tin

Ambalaj

Tape & Reel (TR)

Average Rectified Current

200mA

Operating Temperature Junction

150°C Max

Terminal Pozisyonu

DUAL

Number Of Phases

1

Kurşunsuz

Lead Free

Parça Durumu

Active

Radyasyon Dayanımı

No

Kılıf / Paket

SC-79, SOD-523

Max Repetitive Reverse Voltage Vrrm

30V

Speed

Small Signal =< 200mA (Io), Any Speed

Fabrika Tedarik Süresi

4 Weeks

Power Dissipation

275mW

Terminal Formu

FLAT

Diode Element Material

SILICON

JESD-609 Kodu

e3

Yayın Yılı

2009

Diode Type

Schottky

Max Surge Current

1A

Capacitance Vr F

25pF @ 1V 1MHz

Number Of Elements

1

Montaj

Surface Mount

Temel Parça No

RB521S30

Voltage Forward Vf Max If

500mV @ 200mA

Current Reverse Leakage Vr

30μA @ 10V

Terminal Sayısı

2

Max Reverse Voltage Dc

30V