PUMH17,115

Teknik Özellikler

Resistor Base R1

47k Ω

Yüzey Montaj

YES

Operating Temperature Max

150°C

RoHS Durumu

ROHS3 Compliant

Terminal Kaplaması

Tin (Sn)

Current Collector Cutoff Max

1μA

Jesd30 Code

R-PDSO-G6

Transistor Element Material

SILICON

Number Of Elements

2

Power Max

300mW

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Polarity

NPN

Transistor Application

SWITCHING

Terminal Formu

GULL WING

Yayın Yılı

2009

Terminal Sayısı

6

Montaj Tipi

Surface Mount

Ambalaj

Tape & Reel (TR)

Fabrika Tedarik Süresi

4 Weeks

Currentcollector Ic Max

100mA

Transistor Type

2 NPN - Pre-Biased (Dual)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Additional Feature

BUILT IN BIAS RESISTANCE RATIO IS 0.47

JESD-609 Kodu

e3

Voltage Collector Emitter Breakdown Max

50V

Dc Current Gain Hfe Min Ic Vce

60 @ 5mA 5V

Tepe Reflow Süresi (maks. sn)

40

Tepe Reflow Sıcaklığı (°C)

260

Pin Sayısı

6

Qualification Status

Not Qualified

Resistor Emitter Base R2

22k Ω

ECCN Kodu

EAR99

Vce Saturation Max Ib Ic

150mV @ 500μA, 10mA

Kılıf / Paket

6-TSSOP, SC-88, SOT-363