PUMB13,115

Teknik Özellikler

Resistor Base R1

4.7k Ω

Yüzey Montaj

YES

Operating Temperature Max

150°C

RoHS Durumu

ROHS3 Compliant

Terminal Kaplaması

Tin (Sn)

Current Collector Cutoff Max

1μA

Jesd30 Code

R-PDSO-G6

Transistor Element Material

SILICON

Number Of Elements

2

Power Max

300mW

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Terminal Formu

GULL WING

Transistor Application

SWITCHING

Terminal Sayısı

6

Yayın Yılı

2004

Montaj Tipi

Surface Mount

Ambalaj

Tape & Reel (TR)

Currentcollector Ic Max

100mA

Fabrika Tedarik Süresi

4 Weeks

Transistor Type

2 PNP - Pre-Biased (Dual)

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Additional Feature

BUILT-IN BIAS RESISTOR RATIO IS 10

Voltage Collector Emitter Breakdown Max

50V

JESD-609 Kodu

e3

Polaritychannel Type

PNP

Dc Current Gain Hfe Min Ic Vce

100 @ 10mA 5V

Tepe Reflow Süresi (maks. sn)

40

Pin Sayısı

6

Tepe Reflow Sıcaklığı (°C)

260

Qualification Status

Not Qualified

Resistor Emitter Base R2

47k Ω

ECCN Kodu

EAR99

Vce Saturation Max Ib Ic

100mV @ 250μA, 5mA

Kılıf / Paket

6-TSSOP, SC-88, SOT-363