PQMH11Z

Teknik Özellikler

Transistor Application

SWITCHING

Vce Saturation Max Ib Ic

150mV @ 500μA, 10mA

Pin Sayısı

6

Terminal Sayısı

6

RoHS Durumu

ROHS3 Compliant

Max Power Dissipation

230mW

Fabrika Tedarik Süresi

4 Weeks

Reference Standard

AEC-Q101; IEC-60134

Jesd30 Code

R-PDSO-N6

Resistor Emitter Base R2

10k Ω

Collector Emitter Voltage Vceo

150mV

Montaj

Surface Mount

Resistor Base R1

10k Ω

Number Of Elements

2

Ambalaj

Tape & Reel (TR)

Dc Current Gain Hfe Min Ic Vce

30 @ 5mA 5V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Power Max

230mW

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Element Material

SILICON

Parça Durumu

Active

Transition Frequency

230MHz

Yayın Yılı

2015

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Frequency Transition

230MHz

Case Connection

COLLECTOR

Current Collector Cutoff Max

1μA

Montaj Tipi

Surface Mount

Terminal Formu

NO LEAD

Kılıf / Paket

6-XFDFN Exposed Pad

Collectoremitter Breakdown Voltage

50V

Polaritychannel Type

NPN

Transistor Type

2 NPN - Pre-Biased (Dual)

Seri

Automotive, AEC-Q101

Additional Feature

BUILT IN BIAS RESISTANCE RATIO IS 1

Max Collector Current

100mA