PQMD13Z

Teknik Özellikler

Transistor Type

1 NPN, 1 PNP - Pre-Biased (Dual)

Polaritychannel Type

NPN AND PNP

Kılıf / Paket

6-XFDFN Exposed Pad

Additional Feature

BUILT IN BIAS RESISTANCE RATIO IS 10

Voltage Collector Emitter Breakdown Max

50V

Seri

Automotive, AEC-Q101

Current Collector Cutoff Max

1μA

Case Connection

COLLECTOR

Currentcollector Ic Max

100mA

Frequency Transition

230MHz 180MHz

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Terminal Formu

NO LEAD

Montaj Tipi

Surface Mount

Number Of Elements

2

Yüzey Montaj

YES

Ambalaj

Tape & Reel (TR)

Resistor Base R1

4.7k Ω

Fabrika Tedarik Süresi

4 Weeks

Reference Standard

AEC-Q101; IEC-60134

Jesd30 Code

R-PDSO-N6

Resistor Emitter Base R2

47k Ω

Transistor Element Material

SILICON

Transition Frequency

230MHz

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Power Max

350mW

Dc Current Gain Hfe Min Ic Vce

100 @ 10mA 5V

Pin Sayısı

6

Transistor Application

SWITCHING

Vce Saturation Max Ib Ic

100mV @ 250μA, 5mA

Terminal Sayısı

6

RoHS Durumu

ROHS3 Compliant