PMEG6010ESBYL

Teknik Özellikler

Average Rectified Current

1A

Parça Durumu

Active

Reverse Recovery Time

2.4 ns

Capacitance Vr F

20pF @ 10V 1MHz

Ambalaj

Tape & Reel (TR)

Diode Element Material

SILICON

Nem Hassasiyeti (MSL)

1 (Unlimited)

Forward Current

1A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Yayın Yılı

2017

Diode Type

Schottky

Max Reverse Voltage Dc

60V

Terminal Sayısı

2

Current Reverse Leakage Vr

30μA @ 60V

Operating Temperature Max

150°C

RoHS Durumu

ROHS3 Compliant

Number Of Elements

1

Kılıf / Paket

2-XDFN

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Pin Sayısı

2

Montaj

Surface Mount

Configuration

SINGLE

Montaj Tipi

Surface Mount

Terminal Pozisyonu

BOTTOM

Voltage Forward Vf Max If

730mV @ 1A

Fabrika Tedarik Süresi

8 Weeks

Terminal Formu

NO LEAD

Reference Standard

IEC-60134

Operating Temperature Junction

150°C Max