PMEG4010AESBYL

Teknik Özellikler

Kurşunsuz

Lead Free

Capacitance Vr F

75pF @ 1V 1MHz

Average Rectified Current

1A

Parça Durumu

Active

Reverse Recovery Time

3.1 ns

Yayın Yılı

2015

Diode Type

Schottky

Diode Element Material

SILICON

Ambalaj

Cut Tape (CT)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Forward Current

1A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Terminal Sayısı

2

Current Reverse Leakage Vr

1250μA @ 40V

Max Reverse Voltage Dc

40V

Kılıf / Paket

2-XDFN

Operating Temperature Max

150°C

RoHS Durumu

ROHS3 Compliant

Number Of Elements

1

Pin Sayısı

2

Voltage Forward Vf Max If

505mV @ 1A

Terminal Pozisyonu

BOTTOM

Fabrika Tedarik Süresi

8 Weeks

Montaj

Surface Mount

Configuration

SINGLE

Montaj Tipi

Surface Mount

Terminal Formu

NO LEAD

Operating Temperature Junction

150°C Max

Reference Standard

IEC-60134