PMDXB600UNEZ

Teknik Özellikler

Terminal Sayısı

6

Çalışma Sıcaklığı

-55°C~150°C TJ

Transistor Application

SWITCHING

Terminal Kaplaması

Tin (Sn)

Number Of Elements

2

Turn On Delay Time

5.6 ns

Input Capacitance Ciss Max Vds

21.3pF @ 10V

Fet Feature

Logic Level Gate

Case Connection

DRAIN

Operating Mode

ENHANCEMENT MODE

Radyasyon Dayanımı

No

Pin Sayısı

6

Pin Sayısı

6

Fall Time Typ

51 ns

Yüzey Montaj

YES

Gate To Source Voltage Vgs

8V

Rds On Max Id Vgs

620m Ω @ 600mA, 4.5V

Turn Off Delay Time

19 ns

Kurşunsuz

Lead Free

Max Power Dissipation

265mW

Fet Type

2 N-Channel (Dual)

Rise Time

9.2ns

Yayın Yılı

2015

Vgsth Max Id

950mV @ 250μA

Seri

TrenchFET®

JESD-609 Kodu

e3

Montaj Tipi

Surface Mount

Gate Charge Qg Max Vgs

0.7nC @ 4.5V

Continuous Drain Current Id

600mA

Ambalaj

Tape & Reel (TR)

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Max Dual Supply Voltage

20V

Kılıf / Paket

6-XFDFN Exposed Pad

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Element Material

SILICON

RoHS Durumu

ROHS3 Compliant

Fabrika Tedarik Süresi

4 Weeks

Power Max

265mW

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Parça Durumu

Active