PMDT290UNE,115

Teknik Özellikler

Number Of Elements

2

Terminal Kaplaması

Tin (Sn)

Transistor Application

SWITCHING

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Sayısı

6

Operating Mode

ENHANCEMENT MODE

Fet Feature

Logic Level Gate

Input Capacitance Ciss Max Vds

83pF @ 10V

Drain Currentmax Abs Id

0.8A

Turn On Delay Time

6 ns

Fall Time Typ

31 ns

Drainsource On Resistancemax

0.38Ohm

Pin Sayısı

6

Terminal Formu

FLAT

Pin Sayısı

6

Radyasyon Dayanımı

No

Turn Off Delay Time

86 ns

Rds On Max Id Vgs

380m Ω @ 500mA, 4.5V

Gate To Source Voltage Vgs

8V

Yüzey Montaj

YES

Vgsth Max Id

950mV @ 250μA

Yayın Yılı

2011

Drain To Source Breakdown Voltage

20V

Fet Type

2 N-Channel (Dual)

Rise Time

4ns

Power Dissipation

390mW

Max Power Dissipation

500mW

Kurşunsuz

Lead Free

Montaj Tipi

Surface Mount

JESD-609 Kodu

e3

Seri

Automotive, AEC-Q101, TrenchMOS™

Kılıf / Paket

SOT-563, SOT-666

Max Dual Supply Voltage

20V

Ambalaj

Tape & Reel (TR)

Element Configuration

Dual

Continuous Drain Current Id

800mA

Gate Charge Qg Max Vgs

0.68nC @ 4.5V

Parça Durumu

Active

Fabrika Tedarik Süresi

4 Weeks

Fet Technology

METAL-OXIDE SEMICONDUCTOR