PMDPB58UPE,115

Teknik Özellikler

RoHS Durumu

ROHS3 Compliant

Transistor Element Material

SILICON

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Fabrika Tedarik Süresi

8 Weeks

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Ambalaj

Tape & Reel (TR)

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Continuous Drain Current Id

3.6A

Gate Charge Qg Max Vgs

9.5nC @ 4.5V

Kılıf / Paket

6-UDFN Exposed Pad

Max Dual Supply Voltage

-20V

Drain To Source Voltage Vdss

20V

Montaj Tipi

Surface Mount

JESD-609 Kodu

e3

Max Power Dissipation

515mW

Vgsth Max Id

950mV @ 250μA

Yayın Yılı

2012

Rise Time

15ns

Fet Type

2 P-Channel (Dual)

Gate To Source Voltage Vgs

8V

Yüzey Montaj

YES

Turn Off Delay Time

41 ns

Rds On Max Id Vgs

67m Ω @ 2A, 4.5V

Pin Sayısı

6

Radyasyon Dayanımı

No

Pulsed Drain Currentmax Idm

14.4A

Fall Time Typ

14 ns

Pin Sayısı

6

Case Connection

DRAIN

Fet Feature

Logic Level Gate

Input Capacitance Ciss Max Vds

804pF @ 10V

Turn On Delay Time

7 ns

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Sayısı

6

Number Of Elements

2

Terminal Kaplaması

Tin (Sn)

Transistor Application

SWITCHING