PMCXB900UEZ

Teknik Özellikler

Operating Mode

ENHANCEMENT MODE

Current Continuous Drain Id25

600mA 500mA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Tape & Reel (TR)

Max Power Dissipation

265mW

Parça Durumu

Active

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Yayın Yılı

2015

Radyasyon Dayanımı

No

Gate Charge Qg Max Vgs

0.7nC @ 4.5V

Seri

TrenchFET®

Fabrika Tedarik Süresi

4 Weeks

Continuous Drain Current Id

500mA

Vgsth Max Id

950mV @ 250μA

Ds Breakdown Voltagemin

20V

Rds On Max Id Vgs

620m Ω @ 600mA, 4.5V

Case Connection

DRAIN

Input Capacitance Ciss Max Vds

21.3pF @ 10V

Montaj Tipi

Surface Mount

Fet Technology

METAL-OXIDE SEMICONDUCTOR

RoHS Durumu

ROHS3 Compliant

Transistor Application

SWITCHING

Fet Type

N and P-Channel Complementary

Drain To Source Voltage Vdss

20V

Pin Sayısı

6

Fet Feature

Logic Level Gate

Yüzey Montaj

YES

Pin Sayısı

6

Number Of Elements

2

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Transistor Element Material

SILICON

Kılıf / Paket

6-XFDFN Exposed Pad

Terminal Pozisyonu

DUAL

Terminal Sayısı

6

Çalışma Sıcaklığı

-55°C~150°C TJ

Gate To Source Voltage Vgs

8V