PHKD6N02LT,518

Teknik Özellikler

Drainsource On Resistancemax

0.035Ohm

RoHS Durumu

Non-RoHS Compliant

Pin Sayısı

8

Drain To Source Voltage Vdss

20V

Terminal Sayısı

8

Input Capacitance Ciss Max Vds

950pF @ 10V

Seri

TrenchMOS™

Terminal Formu

GULL WING

Yüzey Montaj

YES

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Ambalaj

Tape & Reel (TR)

Ds Breakdown Voltagemin

20V

Operating Mode

ENHANCEMENT MODE

Pin Sayısı

8

Fabrika Tedarik Süresi

16 Weeks

Qualification Status

Not Qualified

Transistor Element Material

SILICON

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Tepe Reflow Sıcaklığı (°C)

260

Vgsth Max Id

1.5V @ 250μA

Tepe Reflow Süresi (maks. sn)

30

JESD-609 Kodu

e4

Power Max

4.17W

Parça Durumu

Obsolete

Transistor Application

SWITCHING

Terminal Kaplaması

NICKEL PALLADIUM GOLD

Continuous Drain Current Id

10.9A

ECCN Kodu

EAR99

Çalışma Sıcaklığı

-55°C~150°C TJ

Rds On Max Id Vgs

20m Ω @ 3A, 5V

Fet Type

2 N-Channel (Dual)

Nem Hassasiyeti (MSL)

2 (1 Year)

Number Of Elements

2

Gate Charge Qg Max Vgs

15.3nC @ 5V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Power Dissipationmax Abs

4.17W

Yayın Yılı

2001

Montaj Tipi

Surface Mount

Jedec95 Code

MS-012AA

Fet Feature

Logic Level Gate