PHKD13N03LT,118

Teknik Özellikler

Pin Sayısı

8

RoHS Durumu

RoHS Compliant

Drainsource On Resistancemax

0.02Ohm

Fall Time Typ

11 ns

Montaj

Surface Mount

Drain To Source Voltage Vdss

30V

Terminal Sayısı

8

Input Capacitance Ciss Max Vds

752pF @ 15V

Rise Time

7ns

Terminal Formu

GULL WING

Seri

TrenchMOS™

Operating Mode

ENHANCEMENT MODE

Gate To Source Voltage Vgs

20V

Ambalaj

Tape & Reel (TR)

Turn Off Delay Time

23 ns

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Drain To Source Breakdown Voltage

30V

Qualification Status

Not Qualified

Pin Sayısı

8

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Transistor Element Material

SILICON

Vgsth Max Id

2V @ 250μA

Tepe Reflow Sıcaklığı (°C)

260

Transistor Application

SWITCHING

Parça Durumu

Obsolete

JESD-609 Kodu

e4

Tepe Reflow Süresi (maks. sn)

30

ECCN Kodu

EAR99

Continuous Drain Current Id

10.4A

Terminal Kaplaması

Nickel/Palladium/Gold (Ni/Pd/Au)

Çalışma Sıcaklığı

-55°C~150°C TJ

Fet Type

2 N-Channel (Dual)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rds On Max Id Vgs

20m Ω @ 8A, 10V

Power Dissipation

3.57W

Gate Charge Qg Max Vgs

10.7nC @ 5V

Number Of Elements

2

Max Power Dissipation

3.57W

Fet Feature

Logic Level Gate

Jedec95 Code

MS-012AA