PHC21025,118

Teknik Özellikler

Continuous Drain Current Id

3.5A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation

2W

Transistor Element Material

SILICON

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Fet Feature

Logic Level Gate

Fet Type

N and P-Channel

Terminal Pozisyonu

DUAL

Terminal Formu

GULL WING

Qualification Status

Not Qualified

Transistor Application

SWITCHING

Jedec95 Code

MS-012AA

RoHS Durumu

ROHS3 Compliant

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Vgsth Max Id

2.8V @ 1mA

Fabrika Tedarik Süresi

16 Weeks

Drain To Source Voltage Vdss

30V

Çalışma Sıcaklığı

150°C TJ

Yayın Yılı

2011

Current Continuous Drain Id25

3.5A 2.3A

Number Of Elements

2

Parça Durumu

Obsolete

Rds On Max Id Vgs

100m Ω @ 2.2A, 10V

Ambalaj

Tape & Reel (TR)

Montaj Tipi

Surface Mount

Terminal Sayısı

8

Yüzey Montaj

YES

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Pin Sayısı

8

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Gate Charge Qg Max Vgs

30nC @ 10V

Input Capacitance Ciss Max Vds

250pF @ 20V

Pin Sayısı

8