PDTD143XTVL

Teknik Özellikler

Transistor Element Material

SILICON

Yayın Yılı

2014

Transistor Type

NPN - Pre-Biased

Current Collector Cutoff Max

500nA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Resistor Emitter Base R2

10 k Ω

Fabrika Tedarik Süresi

4 Weeks

Parça Durumu

Active

Montaj Tipi

Surface Mount

Collector Emitter Voltage Vceo

100mV

Pin Sayısı

3

Collectoremitter Breakdown Voltage

50V

Power Max

320mW

Number Of Elements

1

Terminal Sayısı

3

Transistor Application

SWITCHING

Terminal Pozisyonu

DUAL

Polaritychannel Type

NPN

Montaj

Surface Mount

Transition Frequency

225MHz

Max Collector Current

500mA

Resistor Base R1

4.7 k Ω

Configuration

SINGLE WITH BUILT-IN RESISTOR

Ambalaj

Tape & Reel (TR)

RoHS Durumu

ROHS3 Compliant

Pin Sayısı

3

Frequency Transition

225MHz

Dc Current Gain Hfe Min Ic Vce

70 @ 50mA 5V

Vce Saturation Max Ib Ic

100mV @ 2.5mA, 50mA

Max Power Dissipation

320mW

Terminal Formu

GULL WING