PDTD143XQAZ

Teknik Özellikler

Pin Sayısı

3

Power Max

325mW

Collectoremitter Breakdown Voltage

50V

Terminal Sayısı

3

Seri

Automotive, AEC-Q101

Number Of Elements

1

Terminal Pozisyonu

DUAL

Transistor Application

SWITCHING

Resistor Emitter Base R2

10 k Ω

Fabrika Tedarik Süresi

4 Weeks

Parça Durumu

Active

Montaj Tipi

Surface Mount

Collector Emitter Voltage Vceo

100mV

Jesd30 Code

R-PDSO-N3

Kılıf / Paket

3-XDFN Exposed Pad

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Element Material

SILICON

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Yayın Yılı

2014

Transistor Type

NPN - Pre-Biased

Current Collector Cutoff Max

500nA

Ürün Durumu

Active

Additional Feature

BUILT IN BIAS RESISTANCE RATIO IS 2.13

Max Power Dissipation

325mW

Vce Saturation Max Ib Ic

100mV @ 2.5mA, 50mA

Dc Current Gain Hfe Min Ic Vce

70 @ 50mA 5V

Terminal Formu

NO LEAD

Resistor Base R1

4.7 k Ω

Ambalaj

Tape & Reel (TR)

Configuration

SINGLE WITH BUILT-IN RESISTOR

Case Connection

COLLECTOR

RoHS Durumu

ROHS3 Compliant

Frequency Transition

210MHz

Paket

Tape & Reel (TR)

Transition Frequency

210MHz

Max Collector Current

500mA

Polaritychannel Type

NPN

Reference Standard

AEC-Q101; IEC-60134

Montaj

Surface Mount

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED