PDTD143EUF

Teknik Özellikler

Configuration

SINGLE WITH BUILT-IN RESISTOR

Ambalaj

Tape & Reel (TR)

Resistor Base R1

4.7 k Ω

Frequency Transition

225MHz

Pin Sayısı

3

RoHS Durumu

ROHS3 Compliant

Additional Feature

BUILT IN BIAS RESISTANCE RATIO IS 1

Terminal Formu

GULL WING

Dc Current Gain Hfe Min Ic Vce

60 @ 50mA 5V

Max Power Dissipation

300mW

Vce Saturation Max Ib Ic

100mV @ 2.5mA, 50mA

Polaritychannel Type

NPN

Montaj

Surface Mount

Transition Frequency

225MHz

Max Collector Current

500mA

Fabrika Tedarik Süresi

4 Weeks

Resistor Emitter Base R2

4.7 k Ω

Collector Emitter Voltage Vceo

100mV

Montaj Tipi

Surface Mount

Parça Durumu

Active

Collectoremitter Breakdown Voltage

50V

Power Max

300mW

Pin Sayısı

3

Transistor Application

SWITCHING

Terminal Pozisyonu

DUAL

Number Of Elements

1

Terminal Sayısı

3

Transistor Element Material

SILICON

Current Collector Cutoff Max

500nA

Transistor Type

NPN - Pre-Biased

Yayın Yılı

2014

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kılıf / Paket

SC-70, SOT-323