PDTD123YQAZ

Teknik Özellikler

Additional Feature

BUILT IN BIAS RESISTANCE RATIO IS 4.55

Vce Saturation Max Ib Ic

100mV @ 2.5mA, 50mA

RoHS Durumu

ROHS3 Compliant

Resistor Emitter Base R2

10 k Ω

Max Collector Current

500mA

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Seri

Automotive, AEC-Q101

Collectoremitter Breakdown Voltage

50V

Montaj

Surface Mount

Resistor Base R1

2.2 k Ω

Paket

Bulk

Power Max

325mW

Reference Standard

AEC-Q101; IEC-60134

Kılıf / Paket

3-XDFN Exposed Pad

Fabrika Tedarik Süresi

4 Weeks

Current Collector Cutoff Max

500nA

Ambalaj

Tape & Reel (TR)

Transistor Type

NPN - Pre-Biased

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

1 (Unlimited)

Dc Current Gain Hfe Min Ic Vce

70 @ 50mA 5V

Number Of Elements

1

Jesd30 Code

R-PDSO-N3

Parça Durumu

Active

Terminal Formu

NO LEAD

Case Connection

COLLECTOR

Terminal Sayısı

3

Yayın Yılı

2014

Terminal Pozisyonu

DUAL

Ürün Durumu

Active

Transistor Application

SWITCHING

Max Power Dissipation

325mW

Collector Emitter Voltage Vceo

100mV

Polaritychannel Type

NPN

Pin Sayısı

3

Transition Frequency

210MHz

Configuration

SINGLE WITH BUILT-IN RESISTOR

Montaj Tipi

Surface Mount

Frequency Transition

210MHz