PDTD114ETVL

Teknik Özellikler

Max Collector Current

500mA

Pin Sayısı

3

Resistor Emitter Base R2

10 k Ω

Additional Feature

BUILT IN BIAS RESISTANCE RATIO IS 1

Vce Saturation Max Ib Ic

100mV @ 2.5mA, 50mA

RoHS Durumu

ROHS3 Compliant

Transistor Type

NPN - Pre-Biased

Ambalaj

Tape & Reel (TR)

Transistor Element Material

SILICON

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Fabrika Tedarik Süresi

4 Weeks

Current Collector Cutoff Max

500nA

Power Max

320mW

Collectoremitter Breakdown Voltage

50V

Montaj

Surface Mount

Resistor Base R1

10 k Ω

Terminal Pozisyonu

DUAL

Yayın Yılı

2014

Max Power Dissipation

320mW

Transistor Application

SWITCHING

Terminal Formu

GULL WING

Terminal Sayısı

3

Number Of Elements

1

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Dc Current Gain Hfe Min Ic Vce

70 @ 50mA 5V

Frequency Transition

225MHz

Transition Frequency

225MHz

Configuration

SINGLE WITH BUILT-IN RESISTOR

Montaj Tipi

Surface Mount

Polaritychannel Type

NPN

Pin Sayısı

3

Collector Emitter Voltage Vceo

100mV