PDTD114EQAZ

Teknik Özellikler

Max Collector Current

500mA

Additional Feature

BUILT IN BIAS RESISTANCE RATIO IS 1

RoHS Durumu

ROHS3 Compliant

Resistor Emitter Base R2

10 k Ω

Reference Standard

AEC-Q101; IEC-60134

Kılıf / Paket

3-XDFN Exposed Pad

Fabrika Tedarik Süresi

4 Weeks

Current Collector Cutoff Max

500nA

Transistor Element Material

SILICON

Besleme Gerilimi

3.3V

Collectoremitter Breakdown Voltage

50V

Montaj

Surface Mount

Case Connection

COLLECTOR

Terminal Formu

NO LEAD

Yayın Yılı

2014

Ürün Durumu

Active

Max Power Dissipation

325mW

Transistor Application

SWITCHING

Function

Enable/Disable

Number Of Elements

1

Parça Durumu

Active

Current Supply Max

60mA

Transition Frequency

210MHz

Configuration

SINGLE WITH BUILT-IN RESISTOR

Collector Emitter Voltage Vceo

100mV

Çalışma Sıcaklığı

-20°C ~ 70°C

Frequency Stability

±25ppm

Polaritychannel Type

NPN

Tip

XO (Standard)

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Vce Saturation Max Ib Ic

100mV @ 2.5mA, 50mA

Maks. Oturma Yüksekliği

0.047 (1.20mm)

Transistor Type

NPN - Pre-Biased

Ambalaj

Tape & Reel (TR)

Seri

Automotive, AEC-Q101

Paket

Bulk

Resistor Base R1

10 k Ω

Power Max

325mW

Boyut / Ölçü

0.197 L x 0.126 W (5.00mm x 3.20mm)

Terminal Sayısı

3