PDTD113EUF

Teknik Özellikler

Resistor Emitter Base R2

1 k Ω

Pin Sayısı

3

Additional Feature

BUILT IN BIAS RESISTANCE RATIO IS 1

RoHS Durumu

ROHS3 Compliant

Vce Saturation Max Ib Ic

100mV @ 2.5mA, 50mA

Max Collector Current

500mA

Power Max

300mW

Collectoremitter Breakdown Voltage

50V

Resistor Base R1

1 k Ω

Montaj

Surface Mount

Transistor Type

NPN - Pre-Biased

Ambalaj

Tape & Reel (TR)

Transistor Element Material

SILICON

Kılıf / Paket

SC-70, SOT-323

Current Collector Cutoff Max

500nA

Fabrika Tedarik Süresi

4 Weeks

Number Of Elements

1

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Dc Current Gain Hfe Min Ic Vce

33 @ 50mA 5V

Yayın Yılı

2014

Terminal Pozisyonu

DUAL

Transistor Application

SWITCHING

Max Power Dissipation

300mW

Terminal Formu

GULL WING

Terminal Sayısı

3

Pin Sayısı

3

Polaritychannel Type

NPN

Collector Emitter Voltage Vceo

100mV

Frequency Transition

225MHz

Montaj Tipi

Surface Mount

Transition Frequency

225MHz

Configuration

SINGLE WITH BUILT-IN RESISTOR