PDTD113EQAZ

Teknik Özellikler

Max Collector Current

500mA

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Resistor Emitter Base R2

1 k Ω

Additional Feature

BUILT IN BIAS RESISTANCE RATIO IS 1

RoHS Durumu

ROHS3 Compliant

Vce Saturation Max Ib Ic

100mV @ 2.5mA, 50mA

Transistor Type

NPN - Pre-Biased

Ambalaj

Tape & Reel (TR)

Transistor Element Material

SILICON

Kılıf / Paket

3-XDFN Exposed Pad

Reference Standard

AEC-Q101; IEC-60134

Current Collector Cutoff Max

500nA

Fabrika Tedarik Süresi

4 Weeks

Power Max

325mW

Collectoremitter Breakdown Voltage

50V

Seri

Automotive, AEC-Q101

Paket

Bulk

Montaj

Surface Mount

Resistor Base R1

1 k Ω

Terminal Pozisyonu

DUAL

Yayın Yılı

2014

Max Power Dissipation

325mW

Transistor Application

SWITCHING

Ürün Durumu

Active

Case Connection

COLLECTOR

Terminal Formu

NO LEAD

Terminal Sayısı

3

Jesd30 Code

R-PDSO-N3

Number Of Elements

1

Parça Durumu

Active

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

1 (Unlimited)

Dc Current Gain Hfe Min Ic Vce

33 @ 50mA 5V

Frequency Transition

210MHz

Montaj Tipi

Surface Mount

Transition Frequency

210MHz

Configuration

SINGLE WITH BUILT-IN RESISTOR

Pin Sayısı

3

Polaritychannel Type

NPN

Collector Emitter Voltage Vceo

100mV