PDTC143ZQCZ

Teknik Özellikler

Pd Power Dissipation

450 mW

Power Max

360 mW

Resistor Base R1

4.7 kOhms

Transistor Type

NPN - Pre-Biased

Ambalaj

MouseReel

Collector Emitter Voltage Vceo Max

50 V

RoHS

Details

Part Aliases

934660912147

Kılıf / Paket

3-XDFN Exposed Pad

Current Collector Cutoff Max

100nA

Resistor Emitter Base R2

47 kOhms

Maximum Dc Collector Current

100 mA

Vce Saturation Max Ib Ic

100mV @ 250μA, 5mA

Currentcollector Ic Max

100 mA

Tedarikçi Cihaz Paketi

DFN1412D-3

Maximum Collector Emitter Voltage

50 V

Package Type

DFN1412D-3

Montaj Stili

SMD/SMT

Voltage Collector Emitter Breakdown Max

50 V

Continuous Collector Current

100 mA

Maks. Çalışma Sıcaklığı

+ 150 C

Frequency Transition

230 MHz

Minimum Operating Temperature

- 55 C

Transistor Polarity

NPN

Dc Collectorbase Gain Hfe Min

100 at 10 mA, 5 V

Emitter Base Voltage Vebo

5 V

Typical Input Resistor

4.7 kOhms, 47 kOhms

Fabrika Paket Adedi

5000

Configuration

Single

Montaj Tipi

Surface Mount, Wettable Flank

Number Of Elements Per Chip

3

Dc Current Gain Hfe Min Ic Vce

100 @ 10mA, 5V

Typical Resistor Ratio

10

Ürün Durumu

Obsolete

Ürün Tipi

BJTs - Bipolar Transistors - Pre-Biased