PDTC143XQAZ

Teknik Özellikler

Number Of Elements

1

Jesd30 Code

R-PDSO-N3

Parça Durumu

Active

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

1 (Unlimited)

Dc Current Gain Hfe Min Ic Vce

50 @ 10mA 5V

Terminal Pozisyonu

DUAL

Yayın Yılı

2014

Transistor Application

SWITCHING

Max Power Dissipation

280mW

Case Connection

COLLECTOR

Terminal Formu

NO LEAD

Terminal Sayısı

3

Polaritychannel Type

NPN

Pin Sayısı

3

Collector Emitter Voltage Vceo

100mV

Frequency Transition

230MHz

Configuration

SINGLE WITH BUILT-IN RESISTOR

Transition Frequency

230MHz

Montaj Tipi

Surface Mount

Resistor Emitter Base R2

10 k Ω

Additional Feature

BUILT IN BIAS RESISTANCE RATIO IS 2.1

Vce Saturation Max Ib Ic

100mV @ 500μA, 10mA

RoHS Durumu

ROHS3 Compliant

Max Collector Current

100mA

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Power Max

280mW

Seri

Automotive, AEC-Q101

Collectoremitter Breakdown Voltage

50V

Resistor Base R1

4.7 k Ω

Montaj

Surface Mount

Transistor Type

NPN - Pre-Biased

Ambalaj

Tape & Reel (TR)

Transistor Element Material

SILICON

Reference Standard

AEC-Q101; IEC-60134

Kılıf / Paket

3-XDFN Exposed Pad

Fabrika Tedarik Süresi

4 Weeks

Current Collector Cutoff Max

1μA