Fiyat için teklif alın
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Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Tedarikçi Cihaz Paketi
- DFN1412D-3
- Package Type
- DFN1412D-3
- Maximum Collector Emitter Voltage
- 50 V
- Maximum Dc Collector Current
- 100 mA
- Resistor Emitter Base R2
- 4.7 kOhms
- Currentcollector Ic Max
- 100 mA
- Vce Saturation Max Ib Ic
- 100mV @ 500μA, 10mA
- Transistor Type
- NPN - Pre-Biased
- Collector Emitter Voltage Vceo Max
- 50 V
- Kılıf / Paket
- 3-XDFN Exposed Pad
- Current Collector Cutoff Max
- 100nA
- Pd Power Dissipation
- 450 mW
- Power Max
- 360 mW
- Resistor Base R1
- 4.7 kOhms
- Ürün Durumu
- Obsolete
- Number Of Elements Per Chip
- 3
- Typical Resistor Ratio
- 1
- Dc Current Gain Hfe Min Ic Vce
- 30 @ 10mA, 5V
- Transistor Polarity
- NPN
- Maks. Çalışma Sıcaklığı
- + 150 C
- Frequency Transition
- 230 MHz
- Minimum Operating Temperature
- - 55 C
- Typical Input Resistor
- 4.7 kOhms
- Dc Collectorbase Gain Hfe Min
- 30 at 10 mA, 5 V
- Montaj Tipi
- Surface Mount, Wettable Flank
- Configuration
- Single
- Voltage Collector Emitter Breakdown Max
- 50 V
- Montaj Stili
- SMD/SMT
- Continuous Collector Current
- 100 mA
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