PDTC143EQC-QZ

Teknik Özellikler

Voltage Collector Emitter Breakdown Max

50 V

Montaj Stili

SMD/SMT

Continuous Collector Current

100mA

Fabrika Paket Adedi

5000

Typical Input Resistor

4.7 kOhms

Emitter Base Voltage Vebo

10 V

Dc Collectorbase Gain Hfe Min

30 at 10 mA, 5 V

Transistor Polarity

Single NPN

Frequency Transition

230 MHz

Minimum Operating Temperature

- 55 C

Maks. Çalışma Sıcaklığı

+ 150 C

Montaj Tipi

Surface Mount, Wettable Flank

Configuration

Single

Number Of Elements Per Chip

3

Typical Resistor Ratio

1

Dc Current Gain Hfe Min Ic Vce

30 @ 10mA, 5V

Ürün Durumu

Active

Ürün Tipi

BJTs - Bipolar Transistors - Pre-Biased

Pd Power Dissipation

450 mW

Power Dissipation

360mW

Resistor Base R1

4.7 kOhms

Qualification

AEC-Q101

Seri

Automotive, AEC-Q101

RoHS

Details

Collector Emitter Voltage Vceo Max

50 V

Transistor Type

NPN - Pre-Biased

Ambalaj

MouseReel

Current Collector Cutoff Max

1μA

Kılıf / Paket

3-XDFN Exposed Pad

Part Aliases

934663497147

Resistor Emitter Base R2

4.7 kOhms

Maximum Dc Collector Current

100 mA

Currentcollector Ic Max

100 mA

Vce Saturation Max Ib Ic

150mV @ 500μA, 10mA

Package Type

DFN1412D-3

Maximum Collector Emitter Voltage

50 V

Tedarikçi Cihaz Paketi

DFN1412D-3