Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Seri
- Automotive, AEC-Q101
- Resistor Base R1
- 22 kOhms
- Qualification
- AEC-Q101
- Power Dissipation
- 360mW
- Power Max
- 360 mW
- Pd Power Dissipation
- 450 mW
- Kılıf / Paket
- 3-XDFN Exposed Pad
- Part Aliases
- 934663505147
- Current Collector Cutoff Max
- 100nA
- Transistor Type
- NPN - Pre-Biased
- Ambalaj
- MouseReel
- Collector Emitter Voltage Vceo Max
- 50 V
- RoHS
- Details
- Currentcollector Ic Max
- 100 mA
- Vce Saturation Max Ib Ic
- 100mV @ 500μA, 10mA
- Maximum Dc Collector Current
- 100 mA
- Resistor Emitter Base R2
- 47 kOhms
- Tedarikçi Cihaz Paketi
- DFN1412D-3
- Package Type
- DFN1412D-3
- Maximum Collector Emitter Voltage
- 50 V
- Continuous Collector Current
- 100mA
- Voltage Collector Emitter Breakdown Max
- 50 V
- Montaj Stili
- SMD/SMT
- Montaj Tipi
- Surface Mount, Wettable Flank
- Configuration
- Single
- Transistor Polarity
- Single NPN
- Maks. Çalışma Sıcaklığı
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Frequency Transition
- 230 MHz
- Fabrika Paket Adedi
- 5000
- Typical Input Resistor
- 22 kOhms, 47 kOhms
- Dc Collectorbase Gain Hfe Min
- 80 at 5 mA, 5 V
- Emitter Base Voltage Vebo
- 7 V
- Typical Resistor Ratio
- 2.13
- Dc Current Gain Hfe Min Ic Vce
- 80 @ 5mA, 5V
- Number Of Elements Per Chip
- 3
- Ürün Tipi
- BJTs - Bipolar Transistors - Pre-Biased
- Ürün Durumu
- Active
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