PDTC124EQCZ

Teknik Özellikler

Typical Resistor Ratio

1

Dc Current Gain Hfe Min Ic Vce

60 @ 5mA, 5V

Number Of Elements Per Chip

3

Ürün Tipi

BJTs - Bipolar Transistors - Pre-Biased

Ürün Durumu

Obsolete

Continuous Collector Current

100 mA

Voltage Collector Emitter Breakdown Max

50 V

Montaj Stili

SMD/SMT

Montaj Tipi

Surface Mount, Wettable Flank

Configuration

Single

Transistor Polarity

NPN

Maks. Çalışma Sıcaklığı

+ 150 C

Minimum Operating Temperature

- 55 C

Frequency Transition

230 MHz

Fabrika Paket Adedi

5000

Typical Input Resistor

22 kOhms

Dc Collectorbase Gain Hfe Min

60 at 5 mA, 5 V

Emitter Base Voltage Vebo

10 V

Currentcollector Ic Max

100 mA

Vce Saturation Max Ib Ic

100mV @ 500μA, 10mA

Maximum Dc Collector Current

100 mA

Resistor Emitter Base R2

22 kOhms

Tedarikçi Cihaz Paketi

DFN1412D-3

Package Type

DFN1412D-3

Maximum Collector Emitter Voltage

50 V

Resistor Base R1

22 kOhms

Power Max

360 mW

Pd Power Dissipation

450 mW

Kılıf / Paket

3-XDFN Exposed Pad

Part Aliases

934660903147

Current Collector Cutoff Max

100nA

Ambalaj

MouseReel

Transistor Type

NPN - Pre-Biased

RoHS

Details

Collector Emitter Voltage Vceo Max

50 V