PDTC124EQB-QZ

Teknik Özellikler

Montaj Stili

SMD/SMT

Voltage Collector Emitter Breakdown Max

50 V

Continuous Collector Current

100mA

Frequency Transition

230 MHz

Minimum Operating Temperature

- 55 C

Maks. Çalışma Sıcaklığı

+ 150 C

Transistor Polarity

Single NPN

Emitter Base Voltage Vebo

10 V

Dc Collectorbase Gain Hfe Min

60 at 5 mA, 5 V

Fabrika Paket Adedi

5000

Typical Input Resistor

22 kOhms

Configuration

Single

Montaj Tipi

Surface Mount, Wettable Flank

Number Of Elements Per Chip

3

Dc Current Gain Hfe Min Ic Vce

60 @ 5mA, 5V

Typical Resistor Ratio

1

Ürün Durumu

Active

Ürün Tipi

BJTs - Bipolar Transistors - Pre-Biased

Power Dissipation

340mW

Pd Power Dissipation

420 mW

Power Max

340 mW

Seri

Automotive, AEC-Q101

Qualification

AEC-Q101

Resistor Base R1

22 kOhms

Transistor Type

NPN - Pre-Biased

Ambalaj

MouseReel

Collector Emitter Voltage Vceo Max

50 V

RoHS

Details

Part Aliases

934663481147

Kılıf / Paket

3-XDFN Exposed Pad

Current Collector Cutoff Max

100nA

Resistor Emitter Base R2

22 kOhms

Maximum Dc Collector Current

100 mA

Vce Saturation Max Ib Ic

100mV @ 500μA, 10mA

Currentcollector Ic Max

100 mA

Tedarikçi Cihaz Paketi

DFN1110D-3

Maximum Collector Emitter Voltage

50 V

Package Type

DFN1110D-3