PDTC124EQAZ

Teknik Özellikler

Parça Durumu

Active

Jesd30 Code

R-PDSO-N3

Number Of Elements

1

Dc Current Gain Hfe Min Ic Vce

60 @ 5mA 5V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

1 (Unlimited)

Max Power Dissipation

280mW

Transistor Application

SWITCHING

Terminal Pozisyonu

DUAL

Yayın Yılı

2014

Terminal Sayısı

3

Case Connection

COLLECTOR

Terminal Formu

NO LEAD

Pin Sayısı

3

Polaritychannel Type

NPN

Collector Emitter Voltage Vceo

150mV

Frequency Transition

230MHz

Montaj Tipi

Surface Mount

Transition Frequency

230MHz

Configuration

SINGLE WITH BUILT-IN RESISTOR

Resistor Emitter Base R2

22 k Ω

RoHS Durumu

ROHS3 Compliant

Vce Saturation Max Ib Ic

150mV @ 500μA, 10mA

Additional Feature

BUILT IN BIAS RESISTANCE RATIO IS 1

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Max Collector Current

100mA

Power Max

280mW

Resistor Base R1

22 k Ω

Montaj

Surface Mount

Collectoremitter Breakdown Voltage

50V

Seri

Automotive, AEC-Q101

Transistor Element Material

SILICON

Transistor Type

NPN - Pre-Biased

Ambalaj

Tape & Reel (TR)

Current Collector Cutoff Max

1μA

Fabrika Tedarik Süresi

4 Weeks

Kılıf / Paket

3-XDFN Exposed Pad

Reference Standard

AEC-Q101; IEC-60134