PDTC114YQC-QZ

Teknik Özellikler

Fabrika Paket Adedi

5000

Power Max

360 mW

Number Of Elements Per Chip

3

Collector Emitter Voltage Vceo Max

50 V

Package Type

DFN1412D-3

Vce Saturation Max Ib Ic

100mV @ 250μA, 5mA

Part Aliases

934663504147

Montaj Tipi

Surface Mount, Wettable Flank

Montaj Stili

SMD/SMT

Ambalaj

MouseReel

Frequency Transition

230 MHz

Maks. Çalışma Sıcaklığı

+ 150 C

Kılıf / Paket

3-XDFN Exposed Pad

Seri

Automotive, AEC-Q101

Dc Current Gain Hfe Min Ic Vce

100 @ 5mA, 5V

Typical Resistor Ratio

4.7

Ürün Tipi

BJTs - Bipolar Transistors - Pre-Biased

Transistor Type

NPN - Pre-Biased

Dc Collectorbase Gain Hfe Min

100 at 5 mA, 5 V

Current Collector Cutoff Max

100nA

Resistor Emitter Base R2

47 kOhms

Emitter Base Voltage Vebo

6 V

Qualification

AEC-Q101

Resistor Base R1

10 kOhms

Maximum Dc Collector Current

100 mA

Transistor Polarity

Single NPN

Configuration

Single

Maximum Collector Emitter Voltage

50 V

Power Dissipation

360mW

Ürün Durumu

Active

Currentcollector Ic Max

100 mA

Typical Input Resistor

10 kOhms, 47 kOhms

Tedarikçi Cihaz Paketi

DFN1412D-3

Continuous Collector Current

100mA

Minimum Operating Temperature

- 55 C

Pd Power Dissipation

450 mW

RoHS

Details

Voltage Collector Emitter Breakdown Max

50 V