PDTC114YQB-QZ

Teknik Özellikler

Current Collector Cutoff Max

100nA

Dc Collectorbase Gain Hfe Min

100 at 5 mA, 5 V

Resistor Emitter Base R2

47 kOhms

Ürün Tipi

BJTs - Bipolar Transistors - Pre-Biased

Typical Resistor Ratio

4.7

Dc Current Gain Hfe Min Ic Vce

100 @ 5mA, 5V

Seri

Automotive, AEC-Q101

Transistor Type

NPN - Pre-Biased

Maks. Çalışma Sıcaklığı

+ 150 C

Kılıf / Paket

3-XDFN Exposed Pad

Montaj Tipi

Surface Mount, Wettable Flank

Montaj Stili

SMD/SMT

Frequency Transition

230 MHz

Ambalaj

MouseReel

Vce Saturation Max Ib Ic

100mV @ 250μA, 5mA

Package Type

DFN1110D-3

Part Aliases

934663486147

Power Max

340 mW

Fabrika Paket Adedi

5000

Collector Emitter Voltage Vceo Max

50 V

Number Of Elements Per Chip

3

Voltage Collector Emitter Breakdown Max

50 V

RoHS

Details

Continuous Collector Current

100mA

Tedarikçi Cihaz Paketi

DFN1110D-3

Typical Input Resistor

10 kOhms, 47 kOhms

Pd Power Dissipation

420 mW

Minimum Operating Temperature

- 55 C

Currentcollector Ic Max

100 mA

Ürün Durumu

Active

Configuration

Single

Maximum Collector Emitter Voltage

50 V

Power Dissipation

340mW

Resistor Base R1

10 kOhms

Transistor Polarity

Single NPN

Maximum Dc Collector Current

100 mA

Qualification

AEC-Q101

Emitter Base Voltage Vebo

6 V